2SK3556 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3556-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
P4
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250
V
VDSX *5
220
V
Continuous drain current
ID
±25
A
Pulsed drain current
ID(puls]
±100
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR *2
25
A
Maximum Avalanche Energy
EAS *1
372
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.02
135
kV/µs
W
Operating and storage
Tch
temperature range
Tstg
+150
°C
-55 to +150
°C
*1 L=0.67mH, Vcc=48V *2 Tch<=150°C *3 IF^<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C
*4 VDS_=<250V *5 VGS=-30V *6 t=60sec f=60Hz
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=12.5A VGS=10V
Tch=25°C
Tch=125°C
ID=12.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=72V ID=12.5A
VGS=10V
RGS=10 Ω
VCC=72V
ID=12A
VGS=10V
L=100µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
250
3.0
V
5.0
V
25
µA
250
10
100
nA
75
100
mΩ
8
16
S
2000 3000
pF
220
330
15
30
20
30
ns
30
45
60
90
20
30
44
66
nC
14
21
16
24
25
A
1.10
1.65 V
0.45
µs
1.5
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.926 °C/W
62.0 °C/W
1