2SK3550-01R Datasheet, PDF (1/1 Pages) Fuji Electric – Power MOSFET SuperFAP-G series Target

PRELIMINARY
2SK3550-01R (900V/1.4Ω/10A)
1) Package
TO-3PF
2) Absolute Maximum Ratings (Tc=25 unless otherwise specified)
Items
Symbols
Ratings
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
V_DS
I_D
I_D(pulse)
V_GS
I_AR
E_AS
dVDS/dt
dV/dt
P_{D c=25}
P_{D @Ta=25}
T_ch
T_stg
900
±10
±40
±30
10
330
20
5
130
3.13
150
-55 +150
Units
V
A
A
V
A
mJ _*1
kV/us
kV/us *2
W
W
ˆ
ˆ
3)Electrical Characteristics (Tch=25 unless otherwise specified)
Items
Symbols
Test Conditions
min.
Drain-Source Breakdown Voltage BV_DSS I_D=250uA V_GS=0V
900
Gate Threshold Voltage
V_GS(th) I_D=250uA V_DS=V_GS
3.0
Zero Gate Voltage Drain Current I_DSS
V_DS=900V T_ch=25ˆ
---
V_GS=0V
T_ch=125ˆ ---
Gate-Source Leakage Current I_GSS
V_GS=±30V V_DS=0V
---
Drain-Source On-State Resistance R_DS(on) I_D=5A
VGS=10V ---
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance C_rss
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain (Miller) Charge
Qgd
Avalanche Capability
I_AV
Diode Forward On-Voltage
V_SD
V_DS=25V
---
V_GS=0V
---
f=1MHz
---
Vcc=450V
---
I_D=10A
---
V_GS=10V
---
L=6.06mH Tch=25ˆ 10
I_F=10A,VGS=0V,Tch=25 ---
typ.
---
---
---
---
---
---
1350
150
7.5
37
12
10
---
1.0
max.
---
5.0
25
250
100
1.4
---
---
---
---
---
---
---
1.5
Units
V
V
A
A
nA
pF
nC
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min. typ. max. Units
0.962 ˆ/W
40.0 ˆ/W
*1 L=6.06mH,Vcc=90V
F^≤ D
µ
≤ _DSS ≤ °
DATE
DRAWN ĚĬķõô÷üôî÷ù
CHECKED ^{ĚĬķõô÷üôî÷ù}
REVISIONS
MA4LE
NAME
APPROVED
Fuji Electric Co.,Ltd.
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