2SK3537-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3537-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
150
V
VDSX *5
130
V
Continuous drain current
ID
±33
A
Pulsed drain current
ID(puls]
±132
A
Gate-source voltage
VGS
±20
V
Repetitive or non-repetitive
IAR *2
33
A
Maximum Avalanche Energy
EAS *1
169
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.16
53
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=0.228mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=<150°C
*3 IF^<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C ^{*4 VDS} =<150V ^{*5 VGS=-20V}
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±20V _VDS=0V
ID=11.5A
Tch=25°C
Tch=125°C
VGS=4V
VGS=5V
ID=11.5A VDS=25V
VGS=10V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=11.5A
VGS=10V
RGS=10 Ω
VCC=48V
ID=23A
VGS=10V
L=228µH Tch=25°C
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min. Typ. Max. Units
150
V
1.0
2.5 V
25
µA
250
10
100
nA
65
90
mΩ
60
81
54
70
12
24
S
1900 2850
pF
200
300
17
25.5
10
15
ns
15
23
85
128
12
18
46
70
nC
8
12
12.5
19
33
A
1.10
1.65 _V
0.13
µs
0.6
µC
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
2.359 °C/W
58.0 °C/W
1