2SK3535-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3535-01
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
for Switching
Foot Print Pattern
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item
Symbol
Drain-source voltage
VDS
VDSX
Continuous drain current
ID
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
ID(puls]
VGS
IAR *2
EAS *1
dVDS/dt
Ratings
250
220
±37
±3.4 *4
±148
±30
37
251.9
20
Unit
V
V
A
A
A
V
A
mJ
kV/µs
Remarks
VGS=30V
Ta=25°C
VDS ^<=250V
Equivalent circuit schematic
(4) Drain(D)
(1) Gate(G)
(2) Source(S)
[signal line]
(3) Source(S)
[power line]
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD
5
2.4 *4
kV/µs
W
Ta=25°C
270
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch _=<150°C *3 IF^<= -ID, -di/dt=50A/µs, Vcc ^<= BVDSS, Tch<= 150°C
*4 Surface mounted on 1000mm², t=1.6mm FR-4 PCB(Drain pad area:500mm²)
Electrical characteristics atTc =25°C ( unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V ^VDS=0V
ID=12.5A VGS=10V
Tch=25°C
Tch=125°C
ID=12.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=72V ID=12.5A
VGS=10V
RGS=10 Ω
VCC=72V
ID=25A
VGS=10V
L=309 µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
250
3.0
V
5.0 ^V
25
µA
250
10
100
nA
75
100
mΩ
8
16
S
2000 3000
pF
220
330
15
30
20
30
ns
30
45
60
90
20
30
44
66
nC
14
21
16
24
37
A
1.10
1.65 V
0.45
µs
1.5
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a) *4
Test Conditions
channel to case
channel to ambient
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
87.0 °C/W
52.0 °C/W
1