2SK3530 Datasheet, PDF (1/1 Pages) Fuji Electric – Fuji Power MOSFET SuperFAP-G series Target Specification

PRELIMINARY
2SK3530-01MR (800V/1.9Ω/7A)
1) Package
TO-220F
2) Absolute Maximum Ratings (Tc=25 unless otherwise specified)
Items
Symbols
Ratings
Drain-Source Voltage
V_DS
800
Continuous Drain Current
I_D
±7
Pulsed Drain Current
I_D(pulse)
±28
Gate-Source Voltage
V_GS
Repetitive and Non-Repetitive
Maximum Avalanche Current
I_AR
Non-Repetitive
Maximum Avalanche Energy
E_AS
±30
7
235.3
Maximum Drain-Source dV/dt dVDS/dt
20
Peak Diode recovery dV/dt
dV/dt
5
Maximum Power Dissipation
P_{D c=25}
P_{D @Ta=25}
70
2.16
Operating and Storage
T_ch
Temperature range
T_stg
150
-55 +150
Units
V
A
A
V
A
mJ _*1
kV/us
kV/us *2
W
W
ˆ
ˆ
3)Electrical Characteristics (Tch=25 unless otherwise specified)
Items
Symbols
Test Conditions
min. typ. max. Units
Drain-Source Breakdown Voltage BV_DSS I_D=250uA V_GS=0V
800
---
---
V
Gate Threshold Voltage
V_GS(th) I_D=250uA V_DS=V_GS
3.0
---
5.0
V
Zero Gate Voltage Drain Current I_DSS
V_DS=800V T_ch=25ˆ
---
V_GS=0V
T_ch=125ˆ ---
---
50
A
---
500
A
Gate-Source Leakage Current I_GSS
V_GS=±30V V_DS=0V
---
---
100 nA
Drain-Source On-State Resistance R_DS(on) I_D=3.5A
VGS=10V ---
---
1.9
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance C_rss
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain (Miller) Charge
Qgd
Avalanche Capability
I_AV
Diode Forward On-Voltage
V_SD
V_DS=25V
---
V_GS=0V
---
f=1MHz
---
Vcc=400V
---
I_D=7A
---
V_GS=10V
---
L=8.80mH Tch=25ˆ
7
I_F=7A,VGS=0V,Tch=25
---
830
---
100
---
pF
5
---
25
---
7.5
--- nC
7
---
---
---
A
1.0
1.5
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min. typ. max. Units
1.79 ˆ/W
58.0 ˆ/W
*1 L=8.80mH,Vcc=80V
F^≤ D
µ
≤ _DSS ≤ °
REVISIONS
DATE
DRAWN _{ĚĬķõô÷Āôî÷ù}
CHECKED ĚĬķõô÷Āôî÷ù
MA4LE
NAME
APPROVED
Fuji Electric Co.,Ltd.
Ĩ
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