2SK3527 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3527-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
600
V
VDSX *5
600
V
Continuous drain current
ID
±17
A
Pulsed drain current
ID(puls]
±68
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
*2
17
A
Maximum Avalanche Energy
EAS
*1
412
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max. power dissipation
PD Ta=25°C
2.50
W
Tc=25°C
220
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=2.62mH, Vcc=60V *2 Tch<=150°C *3 IF^<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C
*4 VDS<= 600V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=8.5A VGS=10V
Tch=25°C
Tch=125°C
ID=8.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=8.5A
VGS=10V
RGS=10 Ω
VCC=300V
ID=17A
VGS=10V
L=2.62mH Tch=25°C
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
600
V
3.0
5.0
V
25
µA
250
10
100
nA
0.29
0.37 Ω
10
20
S
2280 3420
pF
290
435
16
24
26
39
ns
37
56
78
117
13
19
54
81
nC
15
23
20
30
17
A
0.93
1.50 _V
0.7
µs
10.0
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.568 °C/W
50.0 °C/W
1