2SK3469-01MR_03 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3469-01MR
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation Voltage
Symbol
VDS
ID
ID(puls]
VGS
IAR *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25°C
Tc=25°C
Tch
Tstg
VISO *5
Ratings
500
±14
±56
±30
14
188.2
20
5
2.16
70
+150
-55 to +150
2
Unit
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
*1 L=1.76mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch=<150°C
*3 IF^<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C *4 VDS^<= 500V *5 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
Tch=25°C
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=6A VGS=10V
Tch=125°C
ID=6A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=6A
VGS=10V
RGS=10 Ω
VCC=250V
ID=12A
VGS=10V
L=1.76mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
500
3.0
V
5.0 ^V
25
µA
250
10
100
nA
0.40
0.52 Ω
5.5 11
S
1200 1800
pF
140
210
6.0
9.0
17
26
ns
15
23
34
51
7
11
30
45
nC
10
15
11
16.5
14
A
1.00 1.50 V
0.7
µs
4.5
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.79 °C/W
58.0 °C/W
1