2SK3364-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOS-FET

2SK3364-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls)
VGS
EAV *1
PD
Tch
Tstg
Rating
Unit
60
V
± 50
A
±200
A
±30
V
867
mJ
80
W
+150
°C
-55 to +150
°C
*1 L=0.463mH, Vcc=24V
3. Source
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=60V
VGS=0V
VGS=±30V VDS=0V
ID=40A VGS=10V
ID=40A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V ID=80A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min. Typ. Max.
60
2.5 3.0
3.5
10
500
0.2
1.0
10
100
9.5
12
20
40
3100 4650
1300 1950
350
530
20
30
85
120
88
130
65
120
50
1.0
1.5
70
0.13
Units
V
V
µA
mA
nA
mΩ
S
pF
ns
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.56 °C/W
75.0 °C/W
1