2SK3363-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOS-FET

2SK3363-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
Tch
Tstg
Rating
Unit
30
V
±50
A
±200
A
±16
V
1735
mJ
80
W
+150
°C
-55 to +150
°C
*1 L=0.925mH, Vcc=12V
3. Source
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=30V
VGS=0V
VGS=±16V _VDS=0V
ID=50A VGS=4V
ID=50A VGS=10V
ID=50A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=15V ID=100A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
30
1.0
35
50
Typ.
1.5
10
0.2
10
8.0
5.3
70
3900
2000
850
17
70
250
180
1.0
65
0.12
Max.
2.0
500
1.0
100
10. 5
6.8
5850
3000
1280
30
110
380
270
1.5
Units
V
V
µA
mA
nA
mΩ
S
pF
ns
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.56 °C/W
75.0 °C/W
1