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2SK3270-01 Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK3270-01
Trench Gate MOSFET
N-channel MOS-FET
60V 6,5mΩ ±80A 135W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
V DS
ID
I D(puls)
VGS
60
V
±80
A
±320
A
+30 / -20
V
Maximum Avalanche Energy
E AV
Max. Power Dissipation
PD
Operating and Storage Temperature Range
T ch
T stg
613
mJ*
135
W
150
°C
-55 ~ +150
°C
* L=0,13mH, VCC=24V
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=40A
VGS=10V
Min. Typ. Max. Unit
60
V
2,5
3,0
3,5 V
1,0 100,0 µA
10,0 500,0 µA
10 100 nA
5,0
6,5 mΩ
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
g fs
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
I AV
V SD
t rr
Q rr
ID=40A
VDS=10V
VDS=25V
VGS=0V
f=1MHz
VCC=30V
VGS=10V
ID=80A
RGS=10 Ω
L = 100µH Tch=25°C
IF=80A VGS=0V Tch=25°C
IF=50A VGS=0V
-dIF/dt=100A/µs Tch=25°C
25
50
9000
1250
700
50
200
150
135
80
1,0
85
0,25
S
pF
pF
pF
ns
ns
ns
ns
A
1,5 V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to ambient
channel to case
Min. Typ. Max. Unit
75,0 °C/W
0,926 °C/W
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