2SK3262-01MR Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOS-FET

2SK3262-01MR
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220F15
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
2.54
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation Ta=25°C
Tc=25°C
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
PD
Tch
Tstg
Rating
200
±20
±80
±20
355
2
45
+150
-55 to +150
Unit
V
A
A
V
mJ
W
W
°C
°C
*1 L=1.6mH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=200V
VGS=0V
VGS=±20V _VDS=0V
ID=10A VGS=4V
ID=10A VGS=10V
ID=10A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=100V ID=20A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
L=100µH Tch=25°C
IF=20A VGS=0V Tch=25°C
IF=20A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
200
V
1.0 1.5
2.0 V
10
500
µA
0.2
0.5 mA
10
100
nA
110
150
mΩ
85
100
9.0
19.0
S
1700 2550
290
435
pF
185
280
10
15
45
70
ns
225
340
120
180
20
0.93
250
2.90
A
1.40 V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
2.78 °C/W
62.5 °C/W
1