2SK2908-01L Datasheet, PDF (1/3 Pages) Fuji Electric – N-channel MOS-FET

> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2908-01L,S
FAP-IIIB Series
N-channel MOS-FET
600V 1,2Ω ±9A 60W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V _DS
600
V
Continous Drain Current
I_D
±9
A
Pulsed Drain Current
I _D(puls)
±32
A
Gate-Source-Voltage
V _GS
±35
V
Repetitive or non-repetitive
I _AR
9
V
Maximum Avalanche Energy
E _AV
144.4
mJ*
Max. Power Dissipation
P_D
60
W
Operating and Storage Temperature Range
T _ch
150
°C
T _stg
-55 ~ +150
°C
L=3.27mH,Vcc=60V
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t_on (t_on=t_d(on)+t_r)
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
BV _DSS
V _GS(th)
I _DSS
I _DSS
I _GSS
R _DS(on)
g _fs
C _iss
C _oss
C _rss
t _d(on)
t_r
t _d(off)
I_D=1mA
V_GS=0V
I_D=1mA
V_DS=V_GS
V_DS=600V T_ch=25°C
V_GS=0V
T_ch=125°C
V_GS=±35V V_DS=0V
I_D=4,5A
V_GS=10V
I_D=4,5A
V_GS=10V
I_D=4,5A
V_DS=25V
V_DS=25V
V_GS=0V
f=1MHz
V_CC=300V
V_GS=10V
I_D=9A
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
t_f
I _AV
V _SD
t _rr
Q _rr
R_GS=10 Ω
L = 3,27mH T_ch=25°C
I_F=2 X I_DR V_GS=0V T_ch=25°C
I_F=I_DR V_GS=0V
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
600
V
3,5
4,0 4,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
1,0
1,2 Ω
1,0
1,2 Ω
2,5
5
S
900 1400 pF
150 230 pF
70 110 pF
25
40 ns
70 110 ns
60
90 ns
35
60 ns
9
A
1,0 1,50 V
550
ns
7,0
µC
- Thermal Characteristics
Item
Thermal Resistance
R _th(ch-c)
R _th(ch-a)
Symbol
channel to case
channel to ambient
Min. Typ. Max. Unit
2,08 °C/W
75,0 °C/W