2SK2900 Datasheet, PDF (1/3 Pages) Fuji Electric – N CHANNEL MOSFET

> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MOS-FET
60V 14,5mΩ ±45A 60W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
V _DS
I_D
I _D(puls)
V _GS
E _AV
P_D
T _ch
T _stg
60
V
±45
A
±180
A
±30
V
461.9
mJ*
60
W
150
°C
-55 ~ +150
°C
* L=0,304mH, V_CC=24V
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV _DSS
I_D=1mA
V_GS=0V
Gate Threshhold Voltage
V _GS(th)
I_D=10mA
V_DS=V_GS
Zero Gate Voltage Drain Current
I _DSS
V_DS=60V
T_ch=25°C
V_GS=0V
T_ch=125°C
Gate Source Leakage Current
I _GSS
VG_S=30V
V_DS=0V
Drain Source On-State Resistance
R _DS(on)
I_D=22.5A
V_GS=10V
Forward Transconductance
g _fs
I_D=22.5A
V_DS=25V
Input Capacitance
C _iss
V_DS=25V
Output Capacitance
C _oss
V_GS=0V
Reverse Transfer Capacitance
C _rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t _d(on)
t_r
t _d(off)
V_CC=30V
V_GS=10V
I_D=45A
Avalanche Capability
t_f
R_GS=10 Ω
I _AV
L = 100µH T_ch=25°C
Diode Forward On-Voltage
V _SD
I_F=45A V_GS=0V T_ch=25°C
Reverse Recovery Time
t _rr
I_F=45A V_GS=0V
Reverse Recovery Charge
Q _rr
-dI/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
60
V
2,5
3 3,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
12,0 14,5 mΩ
10
25
S
2300 3450 pF
910 1370 pF
260 390 pF
18
30 ns
55
80 ns
70 120 ns
48
80 ns
45
A
1,0 1,5 V
60
ns
0,11
µC
- Thermal Characteristics
Item
Thermal Resistance
R _th(ch-c)
R _th(ch-a)
Symbol
channel to case
channel to ambient
Min. Typ. Max. Unit
2,08 °C/W
75,00 °C/W