2SK2897-01MR_05 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK2897-01MR FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Outline Drawings
TO-220F
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID[puls]
VGS
EAV
PD
Tch
Tstg
Rating
60
Unit Remarks
V
±45
A
±180
A
±20
V
461.9
mJ *1
40
W
+150
°C
-55 to +150 _°C
*1 L=0.304mH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=60V VGS=0V
VGS=±20V VDS=0V
ID=22.5A VGS=10V
ID=22.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=10 Ω
ID=45A
VGS=10V
Tch=25°C
Tch=125°C
VGS=4V
VGS=10V
L=100µH Tch=25°C
IF=45A VGS=0V Tch=25°C
IF=45A
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
60
V
1.0 1.5
2.0 V
10
500
µA
0.2
1.0 mA
10
100
nA
15
20
mΩ
10
12
mΩ
15
35
S
2900 4350
930 1400
pF
260
390
13
30
35
50
190
290
ns
75
140
45
A
0.95
1.43 V
55
ns
0.10
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Min. Typ.
Max. Units
3.125 °C/W
62.5 °C/W
1