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2SK2897-01 Datasheet, PDF (1/3 Pages) Fuji Electric – N-channel MOS-FET
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2897-01
FAP-IIIB Series
N-channel MOS-FET
60V 0,02Ω ±45A 40W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
60
V
Continous Drain Current
ID
±45
A
Pulsed Drain Current
I D(puls)
±185
A
Gate-Source-Voltage
V GS
±20
V
Maximum Avalanche Energy
E AV
461.9
mJ*
Max. Power Dissipation
PD
40
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
L=0.304mH,Vcc=24V
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±20V
VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=22,5A
VGS=4V
ID=22,5A
VGS=10V
Forward Transconductance
g fs
ID=22,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
t d(on)
tr
t d(off)
VCC=30V
VGS=10V
ID=45A
Avalanche Capability
tf
RGS=10 Ω
I AV
L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=45A VGS=0V Tch=25°C
Reverse Recovery Time
t rr
IF=45A VGS=0V
Reverse Recovery Charge
Q rr
-dI/dt=100A/µs Tch=25°C
Min. Typ. Max. Unit
60
V
1,0
1,5 2,0 V
10 500 µA
0,2 1,0 mA
10 100 nA
15
20 mΩ
10
12 mΩ
15
35
S
2900 4350 pF
930 1400 pF
260 390 pF
13
30 ns
35
50 ns
190 290 ns
75 140 ns
45
A
0,95 1,43 V
55
ns
0,10
µC
- Thermal Characteristics
Item
Thermal Resistance
R th(ch-c)
R th(ch-a)
Symbol
channel to case
channel to ambient
Min. Typ. Max. Unit
3,125 °C/W
62,5 °C/W
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