2SK2895-01_05 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK2895-01
FAP-IIIB Series
FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
Temperature range
Symbol
VDS
ID
ID p
VGS
EAV
*1
PD
Tch
Tstg
Ratings
60
±45
±180
±20
461.9
60
+150
-55 to +150
Unit
V
A
A
V
mJ
W
°C
°C
*1 L=0.304mH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID= 1mA VGS=0V
ID= 1mA VDS=VGS
VDS=60V VGS=0V
VGS=±20V ^VDS=0V
ID=22.5A
ID=22.5A
VDS=25V
VGS=0V
f=1MHz
VDS=25V
Tch=25°C
Tch=125°C
VGS=4V
VGS=10V
VCC=30V ID=45A
VGS=10V
RGS=10 Ω
L=100μH Tch=25°C
IF=45A VGS=0V Tch=25°C
IF=45A VGS=0V
-di/dt=100A/μs Tch=25°C
Drain(D)
Gate(G)
Source(S)
Min. Typ. Max. Units
60
V
1.0 1.5
2.0 V
10
500
μA
0.2
1.0 mA
10
100
nA
15
20
mΩ
10
12
15.0 35.0
S
2900 4350
pF
930 1400
260
390
13
30
ns
35
50
190
290
75
140
45
A
0.95
55
1.43 V
ns
0.10
μC
Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
2.08
75.0
Units
°C/W
°C/W
1