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2SK2893-01 Datasheet, PDF (1/3 Pages) Fuji Electric – N-channel MOS-FET
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2893-01
FAP-IIIB Series
N-channel MOS-FET
30V 4mΩ ±100A 150W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol Characteristics
Unit
Drain-Source-Voltage
V DS
30
V
Continous Drain Current
ID
±100
A
Pulsed Drain Current
I D(puls)
±400
A
Gate-Source-Voltage
V GS
±16
V
Maximum Avalanche Energy
E AV
2536.7
mJ*
Max. Power Dissipation
PD
150
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
L=0.338mH,Vcc=12V
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=30V
Tch=25°C
I DSS
VGS=0V
Tch=125°C
Gate Source Leakage Current
I DSS
VGS=±16V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=50A
VGS=4V
ID=50A
VGS=10V
Forward Transconductance
g fs
ID=50A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
t d(on)
tr
t d(off)
VCC=15V
VGS=10V
ID=100A
Avalanche Capability
tf
RGS=10 Ω
I AV
L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=100A VGS=0V Tch=25°C
Reverse Recovery Time
t rr
IF=50A VGS=0V
Reverse Recovery Charge
Q rr
-dI/dt=100A/µs Tch=25°C
Min. Typ. Max. Unit
30
V
1,0
1,5
2,0 V
10 500 µA
0,2 1,0 mA
10 100 nA
4,8 7,0
3,2
4,0 mΩ
45
90
S
6600 9900 pF
3300 4950 pF
1400 2100 pF
20
30 ns
150 230 ns
470 710 ns
370 560 ns
100
A
1,0 1,5 V
95
ns
0.22
µC
- Thermal Characteristics
Item
Thermal Resistance
R th(ch-c)
R th(ch-a)
Symbol
channel to case
channel to air
Min. Typ. Max. Unit
0,83 °C/W
35,00 °C/W
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