2SK2879-01 Datasheet, PDF (1/3 Pages) Fuji Electric – N-channel MOS-FET

2SK2879-01
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
500V 0,38Ω ±20A 150W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T_ch ≤ 150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
V _DS
I_D
I _D(puls)
V _GS
I _AR
E _AS
P_D
T _ch
T _stg
500
±20
±80
±30
20
761
150
150
-55 ~ +150
L=34.9mH,Vcc=50V
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV _DSS
I_D=1mA
V_GS=0V
Gate Threshhold Voltage
V _GS(th)
I_D=1mA
V_DS=V_GS
Zero Gate Voltage Drain Current
I _DSS
V_DS=500V
V_GS=0V
T_ch=25°C
T_ch=125°C
Gate Source Leakage Current
I _GSS
V_GS=±30V V_DS=0V
Drain Source On-State Resistance
R _DS(on)
I_D=10A
V_GS=10V
Forward Transconductance
g _fs
I_D=10A
V_DS=25V
Input Capacitance
C _iss
V_DS=25V
Output Capacitance
C _oss
V_GS=0V
Reverse Transfer Capacitance
C _rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
t _d(on)
V_CC=300V
t_r
I_D=20A
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t _d(off)
V_GS=10V
Avalanche Capability
t_f
R_GS=10 Ω
I _AV
L = 3,49mH T_ch=25°C
Diode Forward On-Voltage
V _SD
I_F=2xI_DR V_GS=0V T_ch=25°C
Reverse Recovery Time
t _rr
I_F=I_DR V_GS=0V
Reverse Recovery Charge
Q _rr
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
500
V
2,5
3,0 3,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
0,33 0,38 Ω
7,5
15
S
2200 3300 pF
330 500 pF
140 210 pF
20
30 ns
160 240 ns
130 200 ns
105 160 ns
20
A
1,1 1,7 V
650
ns
10,0
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R _th(ch-c)
R _th(ch-a)
Test conditions
channel to case
channel to air
Min. Typ. Max. Unit
0,83 °C/W
35,0 °C/W