2SK2806-01 Datasheet, PDF (1/3 Pages) Fuji Electric – N-channel MOS-FET

> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2806-01
FAP-IIIB Series
N-channel MOS-FET
30V 0,02Ω 35A 30W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
V DS
ID
I D(puls)
V GS
E AV
PD
T ch
T stg
30
V
35
A
140
A
±16
V
129,3
mJ*
30
W
150
°C
-55 ~ +150
°C
* L=0,07mH, VCC=12V
> Equivalent Circuit
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
V_GS=0V
Gate Threshhold Voltage
V GS(th)
I_D=1mA
V_DS=V_GS
Zero Gate Voltage Drain Current
I DSS
V_DS=30V
T_ch=25°C
V_GS=0V
T_ch=125°C
Gate Source Leakage Current
I GSS
V_GS=±16V V_DS=0V
Drain Source On-State Resistance
R DS(on)
I_D=17,5A
V_GS=4V
V_GS=10V
Forward Transconductance
g fs
I_D=17,5A
V_DS=25V
Input Capacitance
C iss
V_DS=25V
Output Capacitance
C oss
V_GS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
t d(on)
V_CC=15V
tr
I_D=35A
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t d(off)
V_GS=10V
Avalanche Capability
tf
R_GS=10 Ω
I AV
L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
I_F=2xI_DR V_GS=0V T_ch=25°C
Reverse Recovery Time
t rr
I_F=2xI_DR V_GS=0V
Reverse Recovery Charge
Q rr
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
30
V
1,0
1,5 2,0 V
10 500 µA
0,2 1,0 mA
10 100 nA
0,022 0,03 Ω
0,014 0,02 Ω
16
33
S
1100 1650 pF
550 830 pF
240 360 pF
9
15 ns
15
23 ns
75 115 ns
50
75 ns
35
A
0,98 1,71 V
50
ns
0,08
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75 °C/W
4,16 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98