2SK2767-01_1 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK2767-01
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
FUJI POWER MOSFET
Outline Drawings
TO-220AB
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
IAR *2
EAS *1
PD
Tch
Tstg
Ratings
900
±3.5
±14
±35
3.5
258
80
+150
-55 to +150
*1 L=38.6mH, Vcc=90V
Unit
V
A
A
V
A
mJ
W
°C
°C
*2 Tch<=150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=900V
VGS=0V
VGS=±35V VDS=0V
ID=2.0A VGS=10V
ID=2.0A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=3.5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
L=100 ^µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs _Tch=25°C
Min. Typ.
900
3.5 4.0
10
0.2
10
4.0
1.0 2.0
450
75
40
20
40
50
25
3.5
1.0
1000
5.0
Max.
4.5
500
1.0
100
5.5
680
120
60
30
60
80
40
1.5
Units
V
V
µA
mA
nA
Ω
S
pF
ns
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
1.56
75.0
Units
°C/W
°C/W
1