2SK1663-L Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET

> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
2SK1663-L,S
F-I Series
N-channel MOS-FET
800V 4Ω 3A 80W
> Outline Drawing
> Applications
- Switching Regulators
- UPS
- DC-DC Converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V _DS
800
Continous Drain Current
I_D
3
Pulsed Drain Current
I _D(puls)
12
Continous Reverse Drain Current
I _DR
3
Gate-Source-Voltage
V _GS
±20
Max. Power Dissipation
P_D
80
Operating and Storage Temperature Range
T _ch
150
T _stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
V _(BR)DSS
V _GS(th)
I _DSS
I_D=1mA
I_D=10mA
V_DS=800V
V_GS=0V
V_DS=V_GS
T_ch=25°C
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
I _GSS
R _DS(on)
g _fs
C _iss
V_GS=0V
T_ch=125°C
V_GS=±20V V_DS=0V
I_D=1,5A
V_GS=10V
I_D=1,5A
V_DS=25V
V_DS=25V
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t_on (t_on=t_d(on)+t_r)
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
Diode Forward On-Voltage
Reverse Recovery Time
C _oss
C _rss
t _d(on)
t_r
t _d(off)
t_f
V _SD
t _rr
V_GS=0V
f=1MHz
V_CC=30V
I_D=2,1A
V_GS=10V
R_GS=50Ω
I_F=2xI_DR V_GS=0V T_ch=25°C
I_F=I_DR V_GS=0V
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
800
V
2,1
3,0 4,0 V
0,01 0,5 mA
0,2 1,0 mA
10 100 nA
3
4Ω
2
4
S
900 1400 pF
90 140 pF
35
60 pF
20
30 ns
40
60 ns
150 250 ns
60
90 ns
1 1,35 V
400
ns
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R _th(ch-a)
R _th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
125 °C/W
1,56 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: [phone]; Fax: [phone]