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2SK1098-M Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET
2SK1098-M
F-III Series
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
N-channel MOS-FET
150V 0,5Ω 6A 30W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
150
Continous Drain Current
ID
6
Pulsed Drain Current
I D(puls)
24
Continous Reverse Drain Current
I DR
6
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
PD
30
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=150V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±20V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=3A
VGS=4V
ID=3A
VGS=10V
Forward Transconductance
g fs
ID=3A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=30V
tr
ID=6A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Diode Forward On-Voltage
tf
V SD
RGS=25Ω
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min. Typ. Max. Unit
150
V
1,0
1,5 2,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
0,40 0,65 Ω
0,33 0,50 Ω
3
6
S
600 900 pF
100 150 pF
30
45 pF
10
15 ns
40
60 ns
90 120 ns
30
50 ns
1,01 1,52 V
80
ns
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
4,17 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
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