2SJ477-01MR_06 Datasheet, PDF (1/4 Pages) Fuji Electric – P-CHANNEL SILICON POWER MOSFET

2SJ477-01MR FUJI POWER MOSFET
P-CHANNEL SILICON POWER MOSFET
FAP-III SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Outline Drawings
TO-220F
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum avalanche energy *1
Maximum power dissipation(Tc=25°C)
Operating and storage
temperature range
VDS
ID
ID(puls]
VGS
EAV
PD
Tch
Tstg
-60
V
±25
A
±100
A
±20
V
519.8
mJ
40
W
+150
°C
-55 to +150
°C
*1 L=1.11mH, Vcc= -24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Zero gate voltage drain current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS= -60V
VGS=0V
VGS=±20V VDS=0V
ID= -12.5A
ID=12.5A VDS= -25V
VDS= -25V
VGS=0V
f=1MHz
VCC= -30V RG=10 Ω
ID= -25A
VGS= -10V
Tch=25°C
Tch=125°C
VGS= -4V
VGS= -10V
L=100^μH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/μs Tch=25°C
Min. Typ.
-60
-1.0
7.5
-25
-1.5
-10
-0.2
10
80
45
15.0
2000
700
450
15
80
190
90
-2
160
0.9
Max.
-2.5
-500
-1.0
100
110
60
3000
1050
680
25
120
290
140
-3
Units
V
V
μA
mA
nA
mΩ
mΩ
S
pF
ns
A
V
ns
μC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd/
Symbol
Rth(ch-c)
Rth(ch-a)
Min. Typ.
Max. Units
3.125 °C/W
62.5 °C/W
1