2SJ472-01L_06 Datasheet, PDF (1/4 Pages) Fuji Electric – P-CHANNEL SILICON POWER MOSFET

2SJ472-01L,S
P-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
FAP-III SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Outline Drawings
K-Pack(L)
K-Pack(S)
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
EIAJ
L-type
S-type
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum avalanche energy *1
Maximum power dissipation(Tc=25°C)
Operating and storage
temperature range
VDS
ID
ID(puls]
VGS
EAV
PD
Tch
Tstg
-30
V
±5
A
±20
A
±16
V
191.8
V
15
W
+150
°C
-55 to +150
°C
*1 L=10.23mH, Vcc= -12V
Equivalent circuit schematic
Gate(G)
Drain(D)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS= -30V
VGS=0V
VGS=±16V VDS=0V
ID= -2.5A
ID=2.5A VDS= -25V
VDS= -25V
VGS=0V
f=1MHz
VCC= -12V RG=10 Ω
ID= -5A
VGS= -10V
Tch=25°C
Tch=125°C
VGS= -4V
VGS= -10V
L=100^μH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/μs Tch=25°C
Min.
-30
-1.0
1.5
-5
Typ. Max.
-1.5
-10
-0.2
10
480
210
3.0
250
150
85
10
20
25
20
-2.5
-500
-1.0
100
850
400
380
230
130
15
30
40
30
-2.50 -3.8
90
0.30
Units
V
V
μA
mA
nA
mΩ
mΩ
S
pF
ns
A
V
ns
μC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Min. Typ.
Max. Units
8.33 °C/W
125.0 °C/W
1