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2MBI800U4G-170 Datasheet, PDF (1/6 Pages) Fuji Electric – IGBT MODULE | |||
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2MBI800U4G-170
IGBT Modules
IGBT MODULE (U series)
1700V / 800A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Ampliï¬er
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise speciï¬ed)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Icp
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
AC : 1min.
Mounting
Screw torque (*2)
Main Terminals
Sense Terminals
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
1200
800
2400
1600
800
1600
4800
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise speciï¬ed)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Symbols Conditions
ICES
VGE = 0V, VCE = 1700V
IGES
VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 800mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 800A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VCE = 10V, VGE = 0V, f = 1MHz
ton
tr
toff
VCC = 900V, IC = 800A,
VGE = ±15V, Tj = 125°C,
Rgon = 8.2â¦, Rgoff = 3â¦
tf
VF
(main terminal) VGE = 0V
VF
IF = 800A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
trr
IF = 800A
R lead
Characteristics
min. typ. max.
-
-
1.0
-
-
1600
5.5
6.5
7.5
-
2.47 2.64
-
2.87
-
-
2.25 2.40
-
2.65
-
-
75
-
-
3.10
-
-
1.25
-
-
1.45
-
-
0.25
-
-
2.02 2.39
-
2.22
-
-
1.80 2.15
-
2.00
-
-
0.45
-
-
0.27
-
Units
mA
nA
V
V
nF
µs
V
µs
mâ¦
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min. typ. max.
-
-
0.026
-
-
0.045
-
0.006
-
Units
°C/W
Note *4: This is the value which is deï¬ned mounting on the additional cooling ï¬n with thermal compound.
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