2MBI75N-060 Datasheet, PDF (1/4 Pages) Fuji Electric – IGBT(600V 75A)

IGBT MODULE ( N series )
n Outline Drawing
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
600
V
± 20
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
75
150
A
75
150
320
W
+150
°C
-40 ∼ +125 °C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
2500
V
Mounting *1
3.5
Terminals *2
3.5
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=75mA
VGE=15V IC=75A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=75A
VGE=± 15V
RG=33Ω
IF=75A VGE=0V
IF=75A
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
4950
1100
500
0.6
0.2
0.6
0.2
Max.
1.0
15
7.5
2.8
1.2
0.6
1.0
0.35
3.0
300
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.05
Max.
0.39
0.90
Units
°C/W