2MBI650VXA-170E-50 Datasheet, PDF (1/7 Pages) Fuji Electric – IGBT MODULE (V series) 1700V / 650A / 2 in one package

http://www.fujielectric.com/products/semiconductor/
2MBI650VXA-170E-50
IGBT Modules
IGBT MODULE (V series)
1700V / 650A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
Ic
Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Mounting
Screw torque (*3) Main Terminals
-
Sense Terminals
1ms
1ms
1 device
AC : 1min.
M5
M8
M4
Tc=25°C
Tc=100°C
Maximum ratings
1700
±20
900
650
1300
650
1300
4150
175
150
150
-40 ~ +150
4000
6.0
10.0
2.1
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~   6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals  1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
(*4)
VCE (sat)
(chip)
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 650mA
VGE = 15V
IC = 650A
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
-
-
4.0
-
-
800
6.0
6.5
7.0
-
2.10 2.55
-
2.50
-
-
2.55
-
-
2.00 2.45
-
2.40
-
-
2.45
-
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
(*4)
VF
(chip)
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V
IC = 650A
VGE = ±15V
RG = +1.8/-2.7Ω
VGE = 0V
IF = 650A
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
-
63
-
-
1.25
-
-
0.50
-
-
0.15
-
-
1.55
-
-
0.15
-
-
1.95 2.40
-
2.20
-
-
2.15
-
-
1.85 2.30
-
2.10
-
-
2.05
-
Reverse recovery time
Resistance
B value
trr
IF = 650A
R
T=25°C
T=100°C
B
T=25/50°C
-
-
465
3305
0.24
5000
495
3375
-
-
520
3450
Units
mA
nA
V
V
nF
µs
V
µs
Ω
K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*5)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Characteristics
min. typ. max.
-
-
0.036
-
-
0.072
-
0.0125
-
Units
°C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1