2MBI400N-060-01 Datasheet, PDF (1/4 Pages) Fuji Electric – IGBT(600V / 400A)

2MBI400N-060-01
600V / 400A 2 in one-package
IGBT Module
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous
current
1ms
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Symbol
Rating
Unit
VCES
600
V
VGES
±20
V
IC
400
A
IC pulse
800
A
-IC
400
A
-IC pulse
800
A
PC
1500
W
Tj
+150
°C
Tstg
-40 to +125
°C
Vis
AC 2500 (1min.) V
Mounting *1
3.5
N·m
Terminals *2
4.5
N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5) or (M6)
*2 Recommendable value : 3.5 to 4.5 N·m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
–
–
–
–
4.5
–
1.8
–
– 26400
–
5870
–
2670
–
0.6
–
0.2
–
0.6
–
0.2
–
–
–
–
Max.
2.0
30
7.5
2.8
–
–
–
1.2
0.6
1.0
0.35
3.0
0.3
Equivalent Circuit Schematic
C2E1
C1
E2
¤
¤
G1
E1
G2
E2
¤ Current control circuit
VCE(sat) classification
Rank
F
A
B
C
D
Lenge
1.85 to 2.10V
2.00 to 2.25V
2.15 to 2.40V
2.30 to 2.60V
2.50 to 2.80V
Conditions
Ic = 400A
VGE = 15V
Tj = 25°C
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=400mA
VGE=15V, IC=400A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=400A
VGE=±15V
RG=4.7ohm
IF=400A, VGE=0V
IF=400A
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min.
Typ.
Max.
Rth(j-c)
–
–
0.085 IGBT
Thermal resistance
Rth(j-c)
–
–
0.15 Diode
Rth(c-f)*
–
0.025
–
the base to cooling fin
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W