2MBI300N-120-01 Datasheet, PDF (1/4 Pages) Fuji Electric – 1200V / 300A 2 in one-package

2MBI300N-120-01
1200V / 300A 2 in one-package
IGBT Module
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
Maximum ratings and characteristics
C2E1
Absolute maximum ratings (at Tc=25°C unless otherwise specified) _C1
E2
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous
current
1ms
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Symbol
Rating
VCES
1200
VGES
±20
IC
300
IC pulse
600
-IC
300
-IC pulse
600
PC
2100
Tj
+150
Tstg
-40 to +125
Vis
AC 2500 (1min.)
Mounting *1
3.5
Terminals *2
4.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
¤
¤
G1
E1
G2
E2
¤ Current control circuit
VCE(sat) classification
Rank
F
A
B
Lenge
2.25 to 2.50V
2.40 to 2.65V
2.55 to 2.80V
Conditions
Ic = 300A
VGE = 15V
*1 : Recommendable value : 2.5 to 3.5N·m (M5) or (M6)
*2 : Recommendable value : 3.5 to 4.5N·m (M6)
C
2.70 to 2.95V Tj = 25°C
D
2.85 to 3.10V
Electrical characteristics (at Tj=25°C unless otherwise specified)
E
3.00 to 3.30V
Item
Symbol
Zero gate voltage collector current ICES
Gate-Emitter leakage current
IGES
Gate-Emitter threshold voltage VGE(th)
Collector-Emitter saturation voltage VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on time
ton
tr
Turn-off time
toff
tf
Diode forward on voltage
VF
Reverse recovery time
trr
Characteristics
Min.
Typ.
Max.
–
–
3.0
–
–
45
4.5
–
7.5
–
–
3.3
– 48000
–
– 17400
–
– 15480
–
–
–
1.2
–
0.25 0.6
–
–
1.5
–
0.35 0.5
–
–
3.0
–
–
0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=300mA
VGE=15V, IC=300A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=300A
VGE=±15V
RG=2.7ohm
IF=300A, VGE=0V
IF=300A
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min. Typ.
Max.
Rth(j-c)
–
–
0.06 IGBT
Thermal resistance
Rth(j-c)
–
–
0.15 Diode
Rth(c-f)*
–
0.0167
–
the base to cooling fin
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W