2MBI300N-060-04 Datasheet, PDF (1/4 Pages) Fuji Electric – 600V / 300A 2 in one-package

2MBI300N-060-04
600V / 300A 2 in one-package
IGBT Module
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
C1
E2
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Collector-Emitter voltage
VCES
600
V
¤
¤
Gate-Emitter voltage
VGES
±20
V
Collector Continuous
IC
300
A
current
1ms
IC pulse
600
A
-IC
300
A
G1
E1
G2
E2
¤ Current control circuit
Not ^{recommend for new design. 1ms}
-IC pulse
600
A
Max. power dissipation
PC
1100
W
Operating temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage
Vis
AC 2500 (1min.) ^V
Screw torque
Mounting *1
3.5
N·m
Terminals *1
3.5
N·m
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
ICES
IGES
VGE(th)
Characteristics
Min.
Typ.
–
–
–
–
4.5
–
Max.
2.0
30
7.5
VCE(sat) classification
Rank
F
A
B
C
D
Lenge
1.85 to 2.10V
2.00 to 2.25V
2.15 to 2.40V
2.30 to 2.60V
2.50 to 2.80V
Conditions
Ic = 300A
VGE = 15V
Tj = 25°C
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=300mA
Unit
mA
µA
V
Collector-Emitter saturation voltage VCE(sat)
–
–
2.8
VGE=15V, IC=300A
V
Input capacitance
Cies
– 19800
–
VGE=0V
pF
Output capacitance
Coes
–
4400
–
VCE=10V
Reverse transfer capacitance
Cres
–
2000
–
f=1MHz
Turn-on time
ton
–
0.6 1.2
VCC=300V
µs
tr
–
0.2 0.6
IC=300A
Turn-off time
toff
–
0.6 1.0
VGE=±15V
tf
–
0.2 0.35 RG=6.8ohm
Diode forward on voltage
VF
–
–
3.0
IF=300A, VGE=0V
V
Reverse recovery time
trr
–
–
0.3
IF=300A
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min.
Typ.
Max.
Rth(j-c)
–
–
0.11 IGBT
Thermal resistance
Rth(j-c)
–
–
0.24 Diode
Rth(c-f)*2
–
0.025
–
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W