2MBI225U4N-170-50 Datasheet, PDF (1/6 Pages) Fuji Electric – IGBT MODULE

2MBI225U4N-170-50
IGBT Modules
IGBT MODULE (U series)
1700V / 225A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector current
Icp
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Screw torque
Mounting (*3)
Terminals (*4)
-
Conditions
Continuous
1ms
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
AC : 1min.
Maximum ratings
1700
±20
300
225
600
450
225
450
1040
150
-40 to +125
3400
3.5
4.5
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done.
Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*5)
Resistance
B value
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 225mA
Tj=25°C
VGE = 15V
Tj=125°C
IC = 225A
Tj=25°C
Tj=125°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V
IC = 225A
VGE = ±15V
RG = 2.2Ω
VGE = 0V
IF = 225A
IF = 225A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
T=25°C
T=100°C
T=25/50°C
Characteristics
min. typ. max.
-
-
3.0
-
-
600
4.5
6.5
8.5
-
2.60 2.85
-
3.00
-
-
2.30 2.45
-
2.65
-
-
21
-
-
0.62 1.20
-
0.39 0.60
-
0.05
-
-
0.55 1.50
-
0.09 0.30
-
2.05 2.35
-
2.25
-
-
1.80 1.95
-
2.00
-
-
0.18
0.6
-
1.30
-
-
5000
-
465
495
520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Ω
K
Note *5: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*6)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound
Characteristics
min. typ. max.
-
-
0.12
-
-
0.20
-
0.0167
-
Units
°C/W
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1