2MBI200NB-120-01 Datasheet, PDF (1/4 Pages) Fuji Electric – 1200V / 200A 2 in one-package

2MBI200NB-120-01
1200V / 200A 2 in one-package
IGBT Module
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
C1
E2
Item
Symbol
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltage
VGES
±20
V
¤
¤
Collector Continuous
IC
200
A
current
1ms
IC pulse
400
A
-IC
200
A
1ms
-IC pulse
400
A
G1
E1
G2
E2
¤ Current control circuit
Not ^{recommend for new design. Max. power dissipation}
PC
1500
W
Operating temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage
Vis
AC 2500 (1min.) V
Screw torque
Mounting *1
3.5
N·m
Terminals *2
4.5
N·m
*1 : Recommendable value : 2.5 to 3.5 N·m (M5) or (M6)
*2 : Recommendable value : 3.5 to 4.5 N·m (M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Characteristics
Min. Typ.
–
–
–
–
4.5
–
–
–
Max.
2.0
30
7.5
3.3
VCE(sat) classification
Rank
F
A
B
C
D
E
Lenge
2.25 to 2.50V
2.40 to 2.65V
2.55 to 2.80V
2.70 to 2.95V
2.85 to 3.10V
3.00 to 3.30V
Conditions
Ic = 200A
VGE = 15V
Tj = 25°C
Conditions
Unit
VGE=0V, VCE=1200V
mA
VCE=0V, VGE=±20V
µA
VCE=20V, IC=200mA
V
VGE=15V, IC=200A
V
Input capacitance
Cies
– 32000
–
VGE=0V
pF
Output capacitance
Coes
– 11600
–
VCE=10V
Reverse transfer capacitance
Cres
– 10320
–
f=1MHz
Turn-on time
ton
–
0.65 1.2
VCC=600V
µs
tr
–
0.25 0.6
IC=200A
Turn-off time
toff
–
0.85 1.5
VGE=±15V
tf
–
0.35 0.5
RG=4.7ohm
Diode forward on voltage
VF
–
–
3.0
IF=200A, VGE=0V
V
Reverse recovery time
trr
–
–
0.35 IF=200A
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min. Typ.
Max.
Rth(j-c)
–
–
0.085 IGBT
Thermal resistance
Rth(j-c)
–
–
0.18 Diode
Rth(c-f)*
–
0.025
–
the base to cooling fin
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W