2MBI200N-060 Datasheet, PDF (1/4 Pages) Fuji Electric – IGBT MODULE ( N series )

IGBT MODULE ( N series )
n Outline Drawing
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
600
V
± 20
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
200
400
A
200
400
780
W
+150
°C
-40 ∼ +125 °C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
2500
V
Mounting *1
3.5
Terminals *1
3.5
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse Transfer capacitance
Cres
Turn-on Time
tON
tr
Turn-off Time
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=200mA
VGE=15V IC=200A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=200A
VGE=± 15V
RG=9.1Ω
IF=200A VGE=0V
IF=200A
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min. Typ.
4.5
13200
2930
1330
0.6
0.2
0.6
0.2
Max.
2.0
30
7.5
2.8
1.2
0.6
1.0
0.35
3.0
300
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.025
Max.
0.16
0.35
Units
°C/W