2MBI200N-060-03 Datasheet, PDF (1/4 Pages) Fuji Electric – 600V / 200A 2 in one-package

2MBI200N-060-03
600V / 200A 2 in one-package
IGBT Module
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
C1
E2
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector Continuous
IC
current
1ms
IC pulse
-IC
1ms
-IC pulse
Max. power dissipation
PC
Operating temperature
Tj
Storage temperature
Tstg
Isolation voltage
Vis
Screw torque
Mounting *1
Terminals *1
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Rating
600
±20
200
400
200
400
780
+150
-40 to +125
AC 2500 (1min.)
3.5
3.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
¤
¤
G1
E1
G2
E2
¤ Current control circuit
VCE(sat) classification
Rank
F
A
B
C
D
Lenge
1.85 to 2.10V
2.00 to 2.25V
2.15 to 2.40V
2.30 to 2.60V
2.50 to 2.80V
Conditions
Ic = 200A
VGE = 15V
Tj = 25°C
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
–
–
–
–
4.5
–
–
–
– 13200
–
2930
–
1330
–
0.6
–
0.2
–
0.6
–
0.2
–
–
–
–
Max.
2.0
30
7.5
2.8
–
–
–
1.2
0.6
1.0
0.35
3.0
0.3
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=200mA
VGE=15V, IC=200A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=200A
VGE=±15V
RG=9.1ohm
IF=200A, VGE=0V
IF=200A
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min.
Typ.
Max.
Rth(j-c)
–
–
0.16 IGBT
Thermal resistance
Rth(j-c)
–
–
0.35 Diode
Rth(c-f)*2
–
0.025
–
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W