2MBI100SC-120 Datasheet, PDF (1/4 Pages) Fuji Electric – 1200V / 100A 2 in one-package

2MBI100SC-120
IGBT Module
1200V / 100A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltaga
VGES
±20
V
Collector Continuous Tc=25°C IC
150
A
current
Tc=80°C
100
A
1ms
Tc=25°C IC pulse
300
A
Tc=80°C
200
A
-IC
100
A
1ms
-IC pulse
200
A
Max. power dissipation
PC
780
W
Operating temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage *1
Vis
AC 2500 (1min. ) V
Screw torque
Mounting *2
3.5
N·m
Terminals *2
3.5
N·m
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Equivalent Circuit Schematic
C2E1
C1
E2
G1
E1
G2
E2
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Min.
–
–
5.5
–
Typ.
–
–
7.2
2.3
Max.
2.0
0.4
8.5
2.6
–
2.8 –
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on time
ton
– 12000
–
–
2500
–
–
2200
–
–
0.35 1.2
tr
–
0.25 0.6
Turn-off time
tr(i)
–
0.1 –
toff
–
0.45 1.0
Forward on voltage
tf
–
0.08 0.3
VF
–
2.3 3.0
–
2.0 –
Reverse recovery time
trr
–
–
0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
Tc=25° C VGE=15V, IC=100A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=100A
VGE=±15V
RG=9.1 ohm
Tj=25°C
Tj=125°C
IF=100A
IF=100A, VGE=0V
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
Characteristics
Min.
Typ.
–
–
–
–
–
0.05
Max.
0.16
0.33
–
Conditions
IGBT
Diode
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
mA
µA
V
V
pF
µs
V
µs
Unit
°C/W
°C/W
°C/W