1MBI200NH-060 Datasheet, PDF (1/4 Pages) Fuji Electric – IGBT MODULE ( N series )

IGBT MODULE ( N series )
n Outline Drawing
n Features
• Square RBSOA
• Low Saturation Voltage
• Overcurrent Limiting Function (~3 Times Rated Current)
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
VCES
600
V
Gate -Emitter Voltage
VGES
± 20
V
Collector
Current
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
200
400
A
200
400
Max. Power Dissipation
Operating Temperature
PC
780
W
Tj
+150
°C
Storage Temperature
Tstg
-40 ∼ +125 °C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
2500
V
Mounting *1
3.5
Terminals *1
3.5
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
Reverse Currrent
IRRM
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=200mA
VGE=15V IC=200A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=200A
VGE=± 15V
RG=9.1Ω
IF=200A VGE=0V
IF=200A
VR=600V
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min. Typ.
4.5
13200
2930
1330
0.6
0.2
0.6
0.2
Max.
2.0
30
7.5
2.8
1.2
0.6
1.0
0.35
3.0
300
2.0
Units
mA
µA
V
V
pF
µs
V
ns
mA
Min.
Typ.
0.025
Max.
0.16
0.35
Units
°C/W