FT312D-32Q1C-T Datasheet, PDF (15/27 Pages) Future Technology Devices International Ltd. – USB Android Host IC

DS_FT312D USB ANDROID HOST IC Datasheet
Version 1.1
Document No.: FT_000816 Clearance No.: FTDI# 331
Parameter
Description
Minimum Typical Maximum Units
Differential Input
UVdif
0.2
V
Sensitivity
UDrvZ
Driver Output
Impedance
3
6
Table 7.4USB I/O Pin (USBDP, USBDM) Characteristics
9
Ohms
Conditions
Parameter
Description
Minimum Typical Maximum Units
Conditions
Power supply of internal
1.8V power
VCCK
core cells and I/O to core
1.62
1.8
1.98
V
supply
interface
Power supply of 1.8V
1.8V power
VCC18IO
1.62
1.8
1.98
V
OSC pad
supply
Operating junction
T_J
-40
25
125
°C
temperature
I_in
Input leakage current
-10
±1
10
µA
I_in= VCC18IO or
0V
Tri-state output leakage
I_oz
current
-10
±1
10
µA
Table 7.5Crystal Oscillator 1.8 Volts DC Characteristics
7.2 ESD and Latch-up Specifications
Description
Specification
Human Body Mode (HBM)
Machine mode (MM)
Charged Device Mode (CDM)
Latch-up
Table 7.6 ESD and Latch-up Specifications
± 2000V
± 200V
± 500V
> ± 200mA
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