EFM11M Datasheet, PDF (2/2 Pages) Frontier Electronics. – 1A SURFACE MOUNT FAST EFFICIENT RECOVERY RECTIFIERS

RATINGS AND CHARACTERISTIC CURVE EFM11M THRU EFM18M
FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50Ω
NO INDUCTIVE
100Ω
NO INDUCTIVE
+0.5A
(+)
25 V_dc
(approx)
(-)
D.U.T.
1Ω
NON
INDUCTIVE
(-)
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE ₍₊₎
( NOTE 1 )
0
-0.25A
NOTE: 1. RISE TIME=7ns MAX. INPUT
IMPEDANCE=1 MOhms 22PF
2. RISE TIME =10ns MAX. SOURCE
IMPEDANCE=50 OHMS
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
100
T_J=100^oC
10
T_J=80^oC
1.0
T_J=25^oC
0.1
0.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5-MAXIMUN NON-REPETITIVE
FORWARD SURGE CURRENT
40
8.3 ms Single Half Sine Wave
30
(JEDEC Method)
25
20
15
10
5
01
5 10 20 50 100
NUMBER OF CYCLES AT 60 Hz
EFM11M THRU EFM18M
Trr
1cm
SET TIME BASE
FOR 10/20 ns/cm
FIG. 2-TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
P.C.B MOUNTED ON
0.3×0.3”(8.0×8.0mm)
COPPER PAD AREAS
1.0
Single Phase Half
Wave 60 Hz
Resistive
or Inductive Load
0
25 50 75 100 125 150 175
LEAD TEMPERATURE (^oC)
FIG. 4-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
EFM11M~14M
1.0
EFM15M~16M
.1
.01
EFM18M
.001
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE (V)
FIG. 6-TYPICAL JUNCTION CAPACITANCE
200
100
40
T_J=25^oC
20
EFM11M~14M
10
6
4
EFM15M~18M
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE (V)
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