BY359F-1500 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Damper diode fast, high-voltage

RATINGS AND CHARACTERISTIC CURVE BY359F-1500 THRU BY359F-1500S
FIG. 1 -TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50Ω
NO INDUCTIVE
10Ω
NO INDUCTIVE
(+)
25 V_dc
(approx)
(-)
D.U.T.
1Ω
NON
INDUCTIVE
(-)
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE ₍₊₎
( NOTE 1 )
NOTE: 1. RISE TIME=7ns MAX. INPUT
IMPEDANCE=1 MOhms 22PF
2. RISE TIME =10 ns MAX. SOURCE
IMPEDANCE=50 OHMS
Trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE
FOR 10/20 ns/cm
FIG. 2 -TYPICAL FORWARD
CURRENT DERATING CURVE
6
5
4
3
2
1
0
Single Phase Half Wave 60Hz
Resistive or Inductive Load
25 50 75 100 125 150 175
CASE TEMPERATURE (^oC)
FIG. 4 -TYPICAL REVERSE CHARACTERISTICS
100
T_J=125^oC
10
1
T_J=25^oC
0.1
0.01
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
BY359F-1500 AND BY359F-1500S
FIG. 3 -TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
10
1.0
.1
.01
0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE (V)
FIG. 5 -TYPICAL JUNCTION CAPACITANCE
200
100
40
T_J=25^oC
20
10
6
4
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE (V)
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