SN4148 Datasheet, PDF (1/2 Pages) Frontier Electronics. – CHIP HIGH SPEED SWITCHING DIODES

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
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Web: http://www.frontierusa.com
CHIP HIGH SPEED SWITCHING DIODES
SN4148
FEATURES
z DESIGNED FOR MOUNTING ON SMALL SURFACE
z HIGH SPEED
z HIGH MOUNTING CAPABILITY , STRONG SURGE
WITHSTAND , HIGH RELIABILITY
0.010 ( R0.25 ) Typ.
0.124 ( 3.15 )
0.116 ( 2.95 )
0.020 ( 0.5 ) Typ.
0.063 ( 1.6 )
0.055 ( 1.4 )
MECHANICAL DATA
z CASE: 1206(3216),MOLDED PLASTIC, DIMENSIONS IN MILLIMETERS
z TERMINALS: SOLDER PLATED , SOLDERABLE PER
MIL-STD-750 , METHOD 2026
z POLARITY: INDICATED BY CATHODE BAND
z MOUNTING POSITION: ANY
0.043 ( 1.1 )
0.031 ( 0.8 )
DIMENSIONS IN MILLIMETERS
RATINGS
REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
RECTIFIED CURRENT（AVERAGE）
HALF WAVE RECTIFICATION WITH RESIST LOAD
AT T_amb＝25℃ AND f ≧ 50HZ （NOTE 1）
SURGE FORWARD CURRENT AT T_{P =}1μ S AND T_J＝25℃
SURGE FORWARD CURRENT AT T_{P =}1 S AND T_J＝25℃
POWER DISSIPATION AT T_amb=25℃
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
SYMBOL
V_R
V_RM
I_O
I_FSM
PD
T_J
T_S
SN4148
75
100
150
4.0
1.0
350
175
- 55 TO + 175
UNITS
V
V
mA
mA
mW
℃
℃
CHARACTERISTICS T_J=25℃
FORWARD VOLTAGE AT I_F=10mA
LEAKAGE CURRENT AT V_R=20V
AT V_R=75V
REVERSE BREAKDOWN VOLTAGE
TESTED WITH 100μA PULSES
CAPACITANCE AT V_F=V_R=0
REVERSE RECOVERY TIME
FROM I_F=10mA TO I_R=1mA V_R=6V R_L=50Ω
NOTE ： 1. LEADS KEPT AT AMBIENT TEMP.
SYMBOL
V_F
I_R
I_R
V_R
C_TOT
T_RR
MIN
-
-
-
100
-
-
TYP
MAX
UNITS
-
1
V
-
25
nA
-
2.5
μA
-
-
V
-
4
PF
-
4
nS
SN4148
Page: 1