FM120-N Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: [phone] FAX: [phone]
E-mail: [e-mail]
Web: http://www.frontierusa.com
1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
FM120-N THRU FM160-N
FEATURES
z PLASTIC MATERIAL USED CARRIES UNDERWRITERS
LABORATORY CLASSIFICATION 94 V-0
z FOR SURFACE MOUNTED APPLICATIONS
z EXCEEDS ENVIRONMENTAL STANDARDS OF MIL-S-19500 / 228
z LOW LEAKAGE CURRENT
MECHANICAL DATA
z CASE: MOLDED PLASTIC ,JEDEC SOD-323
DIMENSIONS IN INCHES AND (MILLIMETERS)
z TERMINALS: SOLDER PLATED, SOLDERABLE PER
MIL-STD-750,METHOD 2026
z MOUNTING POSITION : ANY
z WEIGHT: 0.0045 GRAMS
.016(0.4) Typ.
.106(2.7)
.091(2.3)
.057(1.45 )
.041(1.05 )
.012(0.3) Typ.
.047(1.2)
.031(0.8)
.016(0.4) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS
SYMBOL FM120-N FM130-N FM140-N FM150-N FM160-N UNITS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
SEE FIG.1
V_RRM
20
V_RMS
14
V_DC
20
I_O
MAXIMUM OVERLOAD SURGE 8.3ms SINGLE HALF SINE-WAVE I_FSM
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
C_J
STORAGE TEMPERATURE RANGE
T_STG
30
40
50
21
28
35
30
40
50
1.0
30
120
-55 TO + 150
60
V
42
V
60
V
A
A
PF
℃
OPERATING TEMPERATURE RANGE
T_OP
-55 TO + 125
℃
ELECTRICAL CHARACTERISTICS (A_T T_A =25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
SYMBOL FM120-N
MAXIMUM FORWARD VOLTAGE AT 1.0A AND 25℃
V_F
MAXIMUM REVERSE CURRENT AT 25℃
I_R
MARKING
12
NOTE: 1. MEASURED AT 1.0 MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 V
FM130-N
0. 55
13
FM140-N
0.5
14
FM150-N FM160-N
0.70
15
16
UNITS
V
mA
FM120-N THRU FM160-N
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