BAW56 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: [phone] FAX: [phone]
E-mail: [e-mail]
Web: http: //www.frontierusa.com
DUAL SURFACE MOUNT SWITCHING DIODE
BAW56
A
FEATURES
z FAST SWITCHING
z SURFACE MOUNT PACKAGE IDEALLY SUITED
FOR AUTOMATIC INSERTION
z HIGH CONDUCTANCE
3
1
2 ^BC
D
3
E
G
MECHANICAL DATA
z CASE: SOT-23, PLASTIC, DIMENSIONS IN MILLIMETERS
z TERMINALS: SOLDERABLE PER MIL-STD-202, METHOD 208
z POLARITY: SEE DIAGRAM
J
z WEIGHT: 0.008 GRAMS
RATINGS
PEAK REPETITIVE REVERSE VOLTAGE
WORKING PEAK REVERSE VOLTAGE
DC BLOCKING VOLTAGE
FORWARD CONTINUOUS CURRENT (NOTE 1）
RECTIFIED CURRENT（AVERAGE）,HALF WAVE
RECTIFICATION WITH RESIST LOAD
AT T_amb＝25°C AND ≧ 50MHZ （NOTE 1）
PEAK FORWARD SURGE CURRENT @ t=1.0 S
@ t=1.0 μ S
TOTAL DEVICE DISSIPATION FR-5 BOARD（NOTE 1）
DERATE ABOVE 25°C
THERMAL RESISTANCE JUNCTION TO AMBIENT
TOTAL DEVICE DISSIPATION ALUMINA SUBSTRATE (NOTE 2）
DERATE ABOVE 25°C
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
MARKING
SYMBOL
V_RRM
V_RWM
V_R
I_FM
I_O
I_FM(surge)
P_D
RΘ _JA
P_D
T_J
T_S
H
K
L
BAW56
70
300
150
1.0
2.0
350
2.8
357
350
2.8
- 55 TO + 150
- 55 TO + 150
A1
ELECTRICAL CHARACTERISTICS @ T_A=25°C UNLESS OTHERWISE SPECIFIED
CHARACTERISTICS
SYMBOL
Min.
Max.
Unit
MAXIMUM FORWARD VOLTAGE
MAXIMUM PEAK REVERSE CURRENT
V_F
-
I_R
-
715
mV
855
mV
1.0
V
1.25
V
2.5
50
μA
100
CAPACITANCE
REVERSE RECOVERY TIME
NOTE: 1. DIODE ON ALUMINA 10mm x 8 mm x 0.7mm
C_J
-
T_RR
-
4.0
pF
6.0
nS
DIM Min Max
A 0.30 0.51
B 1.20 1.60
C 2.10 3.00
1 _{D 0.85 1.05}
E 0.45 1.00
G 1.70 2.10
2 H 2.70 3.10
J 0.00 0.13
K 0.89 1.30
L 0.30 0.61
M 0.076 0.25
M
UNITS
V
mAdc
mA
A
mW
mW/°C
°C / W
mW
mW/°C
°C
°C
Test Condition
I_F =1.0 mA
I_F =10 mA
I_F =50 mA
I_F =150 mA
V_R=70Vdc
V_R=25Vdc, T_J=150°C
V_R=70Vdc, T_J=150°C
V_R=0, f=1.0MHZ
I_F=10mA to I_RR=1.0 mA
V_R=6.0V , R_L=100Ω
BAW56
Page: 1