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BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode | |||
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Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998 FAX: (805) 522-9989
E-mail: frontiersales@frontierusa.com
Web: http: //www.frontierusa.com
DUAL SURFACE MOUNT SWITCHING DIODE
BAV70
A
FEATURES
z FAST SWITCHING
z SURFACE MOUNT PACKAGE IDEALLY SUITED
FOR AUTOMATIC INSERTION
z HIGH CONDUCTANCE
E
MECHANICAL DATA
z CASE: SOT-23, PLASTIC, DIMENSIONS IN MILLIMETERS
z TERMINALS: SOLDERABLE PER MIL-STD-202, METHOD 208
z POLARITY: SEE DIAGRAM
z WEIGHT: 0.008 GRAMS
J
RATINGS
SYMBOL
PEAK REPETITIVE REVERSE VOLTAGE
WORKING PEAK REVERSE VOLTAGE
DC BLOCKING VOLTAGE
FORWARD CONTINUOUS CURRENT (NOTE 1ï¼
VRRM
VRWM
VR
IFM
RECTIFIED CURRENTï¼AVERAGEï¼,HALF WAVE
RECTIFICATION WITH RESIST LOAD
IO
AT Tambï¼25â AND ⧠50MHZ ï¼NOTE 1ï¼
NON-REPETITIVE PEAD FORWARD SURGE CURRENT @T=1.0us
@T=1.0S
IFM
TOTAL DEVICE DISSIPATION FR-5 BOARDï¼NOTE 2ï¼
PD
DERATE ABOVE 25â
THERMAL RESISTANCE JUNCTION TO AMBIENT
RÎ JA
JUNCTION TEMPERATURE
TJ
STORAGE TEMPERATURE RANGE
TS
MARKING
3
1
2 BC
D
3
G
H
K
L
BAV70
70
300
150
2.0
1.0
350
2.8
357
- 55 TO + 150
- 55 TO + 150
A4
ELECTRICAL CHARACTERISTICS @ TA=25â UNLESS OTHERWISE SPECIFIED
CHARACTERISTICS
SYMBOL
Min.
MAXIMUM FORWARD VOLTAGE
VF
-
MAXIMUM PEAK REVERSE CURRENT
CAPACITANCE
REVERSE RECOVERY TIME
NOTE: 1. DIODE ON ALUMINA 10mmÃ8 mmÃ0.7mm
IR
-
CJ
-
TRR
-
Max.
715
855
1.0
1.25
5.0
60
100
4
6.0
Unit
mV
mV
V
V
μA
μA
μA
pF
nS
DIM Min Max
A 0.30 0.51
1
B 1.20 1.60
C 2.10 3.00
D 0.85 1.05
E 0.45 1.00
2
G 1.70 2.10
H 2.70 3.10
J 0.00 0.13
K 0.89 1.30
L 0.30 0.61
M
M 0.076 0.25
UNITS
V
mAdc
mA
A
mW
mW/â
â /W
â
â
Test Condition
IF =1.0 mA
IF =10 mA
IF =50 mA
IF =150 mA
VR=70Vdc
VR=25Vdc, TJ=150â
VR=70Vdc, TJ=150â
VR=0, f=1.0MHZ
IF=10mA to IRR=1.0 mA
VR=6.0V , RL=100Ω
BAV70
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