BAV21 Datasheet, PDF (1/2 Pages) Frontier Electronics. – SILICON EPITAXIAL PLANAR DIODE

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: [phone] FAX: [phone]
E-mail: [e-mail]
Web: http: //www.frontierusa.com
SILICON EPITAXIAL PLANAR DIODE
BAV21
FEATURES
z FAST SWITCHING
z SMALL SIZE
MECHANICAL DATA
z CASE: GLASS, DO35, DIMENSIONS IN MILLIMETERS
z LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208
z POLARITY: CATHODE INDICATED BY COLOR BAND
z WEIGHT: 0.13 GRAMS
3.9
27.5
MIN
0.52∅
1.9 ∅
RATINGS
REVERSE VOLTAGE
RECTIFIED CURRENT（AVERAGE）
HALF WAVE RECTIFICATION WITH RESIST LOAD
AT T_amb＝25°C AND ≧ 50HZ （NOTE 1）
SURGE FORWARD CURRENT AT T＜1 s AND T_J＝25°C
POWER DISSIPATION AT T_amb=25°C（NOTE 1）
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
SYMBOL
V_R
I_O
I_FSM
P_TOT
T_J
T_S
ELECTRICAL CHARACTERISTICS (A_T T_A =25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
SYMBOL
FORWARD VOLTAGE AT I_F=100mA
LEAKAGE CURRENT
AT V_R=200V
AT V_R=200V T_J=100°C
CAPACITANCE AT V_F=V_R=0
REVERSE RECOVERY TIME
FROM I_F=30mA THROUGH I_R=30mA TO I_R=3mA ; R_L=100Ω
THERMAL RESISTANCE
JUNCTION TO AMBIENT AIR（NOTE 1）
V_F
I_R
I_R
C_TOT
T_RR
R_THA
NOTE: 1. LEADS KEPT AT AMBIENT TEMP. AT 8mm LENGTH
BAV21
250
200
1
400
175
- 55 TO + 175
MAX
1
100
15
1.5
50
0.375
UNITS
V
mA
A
mW
°C
°C
UNITS
V
nA
μA
PF
nS
K / mW
BAV21
Page: 1