BAS70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

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SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70 / 04 / 05 / 06
FEATURES
z LOW TURN-ON VOLTAGE
z FAST SWITCHING
z PN JUNCTION GUARD RING FOR TRANSIENT AND
ESD PROTECTION
MECHANICAL DATA
z CASE: SOT-23, PLASTIC
E
z TERMINALS: SOLDERABLE PER MIL-STD-202,
METHOD 208
z WEIGHT: 0.008 GRAM
z POLARITY: SEE DIAGRAM
A
3
TOP VIEW
BC
1D
2
G
H
K
J
L
SOT-23
DIM Min Max
A 0.30 0.51
B 1.20 1.60
C 2.10 3.00
D 0.85 1.05
E 0.45 1.00
G 1.70 2.10
H 2.70 3.10
J 0.00 0.13
K 0.89 1.30
M
L 0.30 0.61
M 0.076 0.25
All Dimensions in mm
TOP VIEW
BAS70
TOP VIEW
BAS70-04
TOP VIEW
BAS70-05
TOP VIEW
BAS70-06
RATINGS
PEAK REPETITIVE REVERSE VOLTAGE
WORKING PEAK REVERSE VOLTAGE
DC BLOCKING VOLTAGE
FORWARD CONTINUOUS CURRENT ( NOTE 1 )
REPETITIVE PEAK FORWARD CURRENT ( NOTE 1 )
FORWARD SURGE CURRENT @ tp < 1.0s ( NOTE1 )
POWER DISSIPATION（NOTE 1）
THERMAL RESISTANCE. JUNCTION TO AMBIENT AIR
OPERATING AND STORAGE TEMPERATURE RANGE
SYMBOL
VRRM
VRWM
VR
IF
IFRM
IFSM
Pd
RθJA
TJ, TSTG
VALUE
70
100
300
600
200
500
-65 TO +125
UNITS
V
mA
mA
mA
mW
K/W
℃
ELECTRICAL CHARACTERISTICS @ TA=25℃ UNLESS OTHERWISE SPECIFIED
CHARACTERISTICS
SYMBOL Min.
Max.
REVERSE BREAKDOWN VOLTAGE
V(BR)R
70
-
FORWARD VOLTAGE
REVERSE LEAKAGE CURRENT
JUNCTION CAPACITANCE
NOTE: 1. DIODE ON FIBERGLASS SUBSTRATE
VF
-
410
1000
IR
-
100
CJ
-
2
Unit
Test Condition
V
IRS = 100μ A
Tp < 300μ s,duty cycle < 2%
mV
@IF = 1 mA
@IF = 15 mA
nA
tp < 300μ s,duty cycle < 2%
@VR = 50V
pF
VR=1.0 , f=1.0MHZ
BAS70 / 04 / 05 / 06
Page: 1