BAS16 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

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SURFACE MOUNT SWITCHING DIODE
BAS16
A
FEATURES
z FAST SWITCHING
z SURFACE MOUNT PACKAGE IDEALLY SUITED
FOR AUTOMATIC INSERTION
z HIGH CONDUCTANCE
MECHANICAL DATA
z CASE: SOT-23, PLASTIC, DIMENSIONS IN MILLIMETERS
z TERMINALS: SOLDERABLE PER MIL-STD-202, METHOD 208
z POLARITY: SEE DIAGRAM
z WEIGHT: 0.008 GRAMS
1 ³ ₂ ^BC
D
3
E
G
H
K
J
L
DIM Min Max
A 0.30 0.51
B 1.20 1.60
C 2.10 3.00
1
D 0.85 1.05
E 0.45 1.00
G 1.70 2.10
H 2.70 3.10
J 0.00 0.13
K 0.89 1.30
L 0.30 0.61
M 0.076 0.25
M
RATINGS
NON-REPETITIVE PEAK REVERSE VOLTAGE
PEAK REPETITIVE REVERSE VOLTAGE
WORKING PEAK REVERSE VOLTAGE
DC BLOCKING VOLTAGE
RMS REVERSE VOLTAGE
FORWARD CONTINUOUS CURRENT (NOTE 1)
RECTIFIED CURRENT（AVERAGE）,HALF WAVE
RECTIFICATION WITH RESIST LOAD
AT T_amb＝25°C AND ≧ 50MHZ （NOTE 1）
NON-REPETITIVE PEAK FORWARD SURGE CURRENT @ t=1.0 S
@ t=1.0 μ s
POWER DISSIPATION（NOTE 1）
DERATE ABOVE 25℃
THERMAL RESISTANCE
JUNCTION TO AMBIENT AIR（NOTE 1）
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
MARKING
SYMBOL
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_D
Rθ _JA
T_J
T_S
BAS16
100
75
53
300
150
1.0
2.0
350
2.8
357
- 55 TO + 150
- 55 TO + 150
A6
ELECTRICAL CHARACTERISTICS @ T_A=25℃ UNLESS OTHERWISE SPECIFIED
CHARACTERISTICS
SYMBOL
Min.
Max.
Unit
MAXIMUM FORWARD VOLTAGE
MAXIMUM PEAK REVERSE CURRENT
V_F
-
I_RM
-
715
mV
855
mV
1.0
V
1.25
V
1.0
50
μA
30
CAPACITANCE
C_J
-
REVERSE RECOVERY TIME
T_RR
-
NOTE: 1. DIODE ON CERAMIC SUBSTRATE 10mm x 8 mm x 0.7mm
4.0
pF
6.0
nS
UNITS
V
V
V
mA
mA
A
mW
mW/℃
°C / W
°C
°C
Test Condition
I_F =1.0 mA
I_F =10 mA
I_F =50 mA
I_F =150 mA
V_R=75V
V_R=70V, T_J=150℃
V_R=25V, T_J=150℃
V_R=0, f=1.0MHZ
I_F=10mA to I_RR=1.0 mA
V_R=6.0V , R_L=100Ω
BAS16
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