1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
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SILICON EPITAXIAL PLANAR DIODE
1N914 1N914A 1N914B
FEATURES
z FAST SWITCHING
z SMALL BODY
MECHANICAL DATA
z CASE GLASS, DO35, DIMENSIONS IN INCHES AND (MILLIMETERS)
z LEADS SOLDERABLE PER MIL-STD-202, METHOD 208
z POLARITY CATHODE INDICATED BY COLOR BAND
z WEIGHT 0.13 GRAMS
3.9∅
27.5
MIN
0.52∅
1.9 ∅
RATINGS
REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
RECTIFIED CURRENT (AVERAGE)
HALF WAVE RECTIFICATION WITH RESIST LOAD
AT T_amb=25 ºC AND ≥ 50Hz.
SURGE FORWARD CURRENT AT T < 1 s AND T_J=25 ºC
POWER DISSIPATION AT T_amb=25 ºC
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
SYMBOL
V_R
V_RM
I_O
I_FSM
P_TOT
T_J
T_S
1N914
ELECTRICAL CHARACTERISTICS (A_T T_A =25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
SYMBOL
MIN
FORWARD VOLTAGE AT I_F=10mA
FORWARD VOLTAGE AT I_F=20mA
FORWARD VOLTAGE AT I_F=100mA
LEAKAGE CURRENT
( 1N914 )
( 1N914A )
( 1N914B )
V_F
-
AT V_R=20V
AT V_R=75V
AT V_R=20V T_J=150 ºC
REVERSE BREAKDOWN VOLTAGE
TESTED WITH 100μA PULSES
I_R
-
I_R
-
I_R
-
V_R
100
CAPACITANCE AT V_F=V_R=0
VOLTAGE RISE WHEN SWITCHING ON
C_TOT
-
TESTED WITH 50mA FORWARD PULSES
TP=0.1μS RISE TIME＜30ns F_P=50 TO 100 KHZ
V_FR
-
REVERSE RECOVERY TIME
FROM I_F=10mA TO I_R=1mA V_R=6V R_L=100Ω
THERMAL RESISTANCE
FUNCTION TO AMBLENT AIR
T_RR
-
R_THA
-
RECTIFICATION EFFICIENCY
AT F=100 MHZ V_RF=2V
N_V
0.45
1N914A
75
100
75
500
500
200
- 55 TO + 200
1N914B
TYP
MAX
-
1
-
25
-
5
-
50
-
-
-
4
-
2.5
-
4
-
0.35
-
-
UNITS
V
V
mA
mA
mW
ºC
ºC
UNITS
V
nA
μA
μA
V
PF
V
nS
K / mW
-
1N914 1N914A 1N914B
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