1N4148-LFR Datasheet, PDF (1/2 Pages) Frontier Electronics. – SILICON EPITAXIAL PLANAR DIODE

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: [phone] FAX: [phone]
E-mail: [e-mail]
Web: http://www.frontierusa.com
SILICON EPITAXIAL PLANAR DIODE
1N4148-LFR
FEATURES
z FAST SWITCHING
z SMALL SIZE
z ROHS
MECHANICAL DATA
z CASE: GLASS, DO35, DIMENSIONS IN MILLIMETERS
z LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208
z POLARITY: CATHODE INDICATED BY COLOR BAND
z WEIGHT: 0.13 GRAMS
0.52∅
3.9
1.9 ∅
27.5
MIN
RATINGS
REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
RECTIFIED CURRENT (AVERAGE)
HALF WAVE RECTIFICATION WITH RESIST LOAD
AT T_amb=25 ºC AND f ≥ 50HZ (NOTE 1)
SURGE FORWARD CURRENT AT T<1 s AND T_J=25 ºC
POWER DISSIPATION AT T_amb=25 ºC
JUNCTION TEMPERATURE
STORAGE TEMPERATURE RANGE
SYMBOL
V_R
V_RM
I_O
I_FSM
P_TOT
T_J
T_S
ELECTRICAL CHARACTERISTICS (A_T T_A =25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS @ T_J＝25 ºC
SYMBOL
MIN
FORWARD VOLTAGE AT I_F=10mA
LEAKAGE CURRENT
AT V_R=20V
AT V_R=75V
AT V_R=20V T_J=150 ºC
REVERSE BREAKDOWN VOLTAGE
TESTED WITH 100μA PULSES
V_F
-
I_R
-
I_R
-
I_R
-
V_R
100
CAPACITANCE AT V_F=V_R=0
VOLTAGE RISE WHEN SWITCHING ON
TESTED WITH 50mA FORWARD PULSES
TP=0.1μS RISE TIME＜30ns F_P=5 TO 100 KHZ
C_TOT
-
V_FR
-
REVERSE RECOVERY TIME
FROM I_F=10mA TO I_R=1mA V_R=6V R_L=100Ω
THERMAL RESISTANCE
JUNCTION TO AMBIENT AIR (NOTE 1)
T_RR
-
R_THA
-
RECTIFICATION EFFICIENCY
AT f =100 MHZ V_RF=2V
N_V
0.45
NOTE:
1. LEADS KEPT AT AMBIENT TEMP. AT 8mm LENGTH
1N4148-LFR
75
100
150
500
500
200
- 55 TO + 200
TYP
-
-
-
-
-
-
-
-
-
-
MAX
1
25
5
50
-
4
2.5
4
0.35
-
UNITS
V
V
mA
mA
mW
ºC
ºC
UNITS
V
nA
μA
μA
V
PF
V
nS
K / mW
-
1N4148-LFR
Page: 1