MRFE6S9130HR3 Datasheet, PDF (8/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 910 MHz
Z_load
Z_o = 2 Ω
f = 850 MHz
f = 910 MHz
Z_source
f = 850 MHz
V_DD = 28 Vdc, I_DQ = 950 mA, P_out = 27 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
850
0.89 - j1.18
1.50 - j0.09
865
0.87 - j1.03
1.52 + j0.11
880
0.85 - j0.89
1.55 + j0.31
895
0.83 - j0.75
1.60 + j0.51
910
0.84 - j0.64
1.68 + j0.71
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRFE6S9130HR3 MRFE6S9130HSR3
8
RF Device Data
Freescale Semiconductor