MRF6S19100HR3_06 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 1990 MHz
f = 1930 MHz
Z_load
f = 1990 MHz
Z_o = 5 Ω
Z_source
f = 1930 MHz
V_DD = 28 Vdc, I_DQ = 900 mA, P_out = 22 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1.57 - j3.50
2.26 - j2.31
1960
1.83 - j3.29
2.22 - j2.13
1990
2.34 - j3.71
2.14 - j2.00
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19100HR3 MRF6S19100HSR3
8
RF Device Data
Freescale Semiconductor